P80NF55 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. Applications: Advanced Process Technology Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Features: 100% avalanche tested. Designed for automotive applications and AEC-Q101 qualified. Low input capacitance and gate charge. Low gate input resistance. Specifications: Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 80A Drain-Source Resistance (Rds On) 8 Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 155 nC Operating Temperature Range -55°C to 175°C Power Dissipation (Pd) 300W Package Includes: 1 x P80NF55 N-Channel Power MOSFET TO-220 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.
