2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features: High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. Specifications: Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 60V Continuous Drain Current (Id) 200mA Drain-Source Resistance (Rds On) 5 Ohms Gate-Source Voltage (Vgs) 20V Configuration Single Operating Temperature Range -50 to 150°C Power Dissipation (PD) 400mW Package Includes: 1 x 2N7000 N-Channel Enhancement FET TO-92 Package. . *Product Images are shown for illustrative purposes only and may differ from actual product.
