BF199 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. Features: Advanced process technology Low error voltage Fast switching speed Full-voltage operation High power and current handling capability Specifications: Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 25V Collector−Base Voltage (VCBO) 40V Emitter−Base Voltage (VEBO) 4V Continuous Collector Current (Ic) 50mA Collector-Emitter Saturation Voltage (VCE(sat)) 0.2V Transition Frequency (fT) 1100MHz Power Dissipation (Pd) 350mW Operating Temperature Range -55 to 150°C DC Current Gain (hFE) 38 Package Includes: 1 x BF199 NPN RF Transistor TO-92 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.
