IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET TO-247 Package

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Features of irfp250n Mosfet Advanced process technology Dynamic dv/dt rating Fast switching Fully avalanche rated Ease of paralleling Simple drive requirements Lead-Free Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 30A Drain-Source Resistance (Rds On) 0.075Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 123 nC Operating Temperature Range -55 – 175?C Power Dissipation (Pd) 214W