MJE3055T NPN Power Transistor TO-220 Package. MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features: High DC current gain Low collector−emitter saturation voltage High current−gain − bandwidth product Annular construction for low leakage These devices are Pb−Free and are RoHS compliant Specifications: Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 60VDC Collector−Base Voltage (VCBO) 70VDC Emitter−Base Voltage (VEBO) 5VDC Continuous Collector Current (Ic) 10ADC Continuous Base Current (Ib) 6ADC Power Dissipation (Pd) 75W Operating Temperature Range -55 to 150°C DC Current Gain (hFE) 20-7 Length 10mm Width 4mm Height 16mm Package Includes: 1 x MJE3055T NPN Power Transistor TO-220 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.
