MJE340 NPN Bipolar Power Transistor TO-126 Package
$12.6
$21.92
MJE340 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features: High DC current gain. Low collector−emitter saturation voltage. High current−gain − bandwidth product. Annular construction for low leakage. Complementary NPN – PNP devices. Specifications: Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 300V Collector−Base Voltage (VCBO) 300V Emitter−Base Voltage (VEBO) 3V Continuous Collector Current (Ic) 0.5A Power Dissipation (Pd) 20.8W Operating Temperature Range -55 to 150°C DC Current Gain (hFE) 30-240 Length (mm) 7.5 Width (mm) 2.5 Height (mm) 10 Package Includes: 1 x MJE340 NPN Bipolar Power Transistor TO-126 Package. *Product Images are shown for illustrative purposes only and may differ from actual product.
