MJE350 PNP Bipolar Power Transistor TO-126 Package
$12.6
$22.05
MJE350 is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features: High DC current gain. Low collector−emitter saturation voltage. High current−gain − bandwidth product. Annular construction for low leakage. Complementary NPN – PNP devices. Specifications: Transistor Polarity PNP Collector−Emitter Voltage (VCEO) 300V Collector−Base Voltage (VCBO) 300V Emitter−Base Voltage (VEBO) 3V Continuous Collector Current (Ic) 0.5A Power Dissipation (Pd) 20.8W Operating Temperature Range -55 to 150°C DC Current Gain (hFE) 30-240 Length 7.5mm Width 2.5mm Height 10mm Package Includes: 1 x MJE350 PNP Bipolar Power Transistor. *Product Images are shown for illustrative purposes only and may differ from actual product.
