MJE13003 NPN Silicon Power Transistor (PACK OF 100)

These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V. Features • Reverse Biased SOA with Inductive Loads @ TC = 100C • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100C tc @ 1 A, 100C is 290 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available